2009. 10. 7 1/2 semiconductor technical data ktb778 triple diffused pnp transistor revision no : 2 high power amplifier application. features ? complementary to ktd998. ? recommended for 45 ?- 50w audio frequency amplifier output stage. maximum rating (ta=25 ? ) dim millimeters a 1. base 2. collector 3. emitter 16.30 max 4.00 2.00 2.20 max 3.05 max to-3p(h)is a f g e b n m d o o s t h 12.00 0.30 5.50 0.20 1.20 max 8.00 5.00 17.00 0.30 0.60+0.15/-0.10 20.0 0.1 5.45 3.50 1.00 3.00 0.20 37.0 42.0 q p l j k r c 1 2 3 u w v w i b c d e f g h j k l m n o p q r s 2.50 i t u 3.40+0.15/-0.10 v 10 w 8 + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) note : h fe classification r:55 ?- 110, o:80 ?- 160 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-120v, i e =0 - - -10 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -10 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -120 - - v dc current gain h fe (note) v ce =-5v, i c =-1a 55 - 160 collector-emitter saturation voltage v ce(sat) i c =-5a, i b =-0.5a - - -2.5 v base-emitter voltage v be v ce =-5v, i c =-5a - - -1.5 v transition frequency f t v ce =-5v, i c =-1a - 10 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 280 - pf characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current dc i c -10 a pulse i cp -15 base current i b -1 a collector power dissipation (tc=25 ? ) p c 80 w junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ?
2009. 10. 7 2/2 ktb778 revision no : 2 -0.1 collector emitter voltage v ce (v) safe operating area collector current i c (a) -0.3 -0.5 -1 -3 -5 -10 -15 -30 i c - v ce collector-emitter voltage v ce (v) 0-2-4 -10 collector current i c (a) dc current gain h fe 10 -0.03 -0.01 h fe - i c collector current i c (a) collector-emitter saturation -0.01 -0.03 -0.01 collector current i c (a) v ce(sat) - i c 60 collector power dissipation p c (w) 100 80 40 0 pc - ta -6 -8 -10 -12 -14 0 -2 -4 -6 -8 common emitter tc=25 c i =-20ma b -50ma -100ma -200ma -300ma -400ma 0ma -0.1 -0.3 -1 -3 -10 30 50 100 300 500 1k common emitter v =-5v ce tc=100 c tc=25 c tc=-25 c voltage v ce(sat) (v) -0.1 -0.3 -1 -3 -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 common emitter i /i =10 c b tc=100 c t c=25 c tc=-25 c 120 160 200 240 0 20 40 80 ta=tc infinite heat sink 300x300x2mm al heat sink 200x200x2mm al heat sink 100x100x2mm al heat sink no heat sink 1 2 3 4 5 1 2 3 4 5 -1 -3 -10 -30 -100 -300 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c i max(continuous) c dc operatio n tc=25 c t=1ms t=10ms t=100ms t=500ms v ma x ceo ambient temperature ta ( c)
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